Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing
Identifieur interne : 000800 ( Chine/Analysis ); précédent : 000799; suivant : 000801Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing
Auteurs : RBID : Pascal:11-0368813Descripteurs français
- Pascal (Inist)
- Synthèse hydrothermale, Pressage chaud, Indium, Synthèse nanomatériau, Croissance cristalline en solution, Fusion, Composition phase, Microstructure, Diffraction RX, Microscopie électronique balayage, Propriété électronique, Emission électronique champ, Microscopie électronique émission champ, Microscopie émission champ, Skutterudites remplies, Antimoniure de cobalt, Skutterudite, Spectrométrie dispersive, Matériau thermoélectrique, Propriété thermoélectrique, Pouvoir thermoélectrique, Propriété volume, Cavité dans réseau, Défaut cristallin, Préparation échantillon, Traitement matériau, Substrat indium, In, CoSb3, 8116B, 7220P.
English descriptors
- KwdEn :
- Bulk properties, Cobalt antimonides, Crystal defects, Crystal growth from solutions, Dispersive spectrometry, Electron field emission, Electronic properties, Field emission electron microscopy, Field emission microscopy, Filled skutterudites, Hot pressing, Hydrothermal synthesis, Indium, Material processing, Melting, Microstructure, Nanomaterial synthesis, Phase composition, Sample preparation, Scanning electron microscopy, Skutterudite, Thermoelectric materials, Thermoelectric power, Thermoelectric properties, Voids, XRD.
Abstract
Indium-filled CoSb3 materials have been investigated by combining hydrothermal synthesis and hot pressing. The materials were prepared as follows. Corresponding nanopowders were synthesized by a hydrothermal synthesis method, in some cases followed by melting at 1373 K, and then hot pressed at 923 K. The phase composition and microstructure of the bulk materials were analyzed by conventional methods, such as x-ray diffraction (XRD), scanning electron microscopy (SEM), and field-emission SEM equipped with energy-dispersive x-ray spectroscopy (EDS). The thermoelectric properties of the bulk materials were measured from room temperature to 773 K. The results reveal that indium can be successfully filled into the voids of the CoSb3 structure when the sample preparation procedure contains melting. The influence of the processing on the thermoelectric properties of the materials is also discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing</title><author><name sortKey="Du, Y" uniqKey="Du Y">Y. Du</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Functional Materials Research Laboratory, Tongji University, 1239 Siping Road</s1><s2>Shanghai 200092</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200092</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CSIRO Materials and Engineering Division, 37 Graham Road, Highett</s1><s2>VIC 3149</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>VIC 3149</wicri:noRegion></affiliation></author><author><name sortKey="Cai, K F" uniqKey="Cai K">K. F. Cai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Functional Materials Research Laboratory, Tongji University, 1239 Siping Road</s1><s2>Shanghai 200092</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200092</wicri:noRegion></affiliation></author><author><name sortKey="Chen, S" uniqKey="Chen S">S. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Functional Materials Research Laboratory, Tongji University, 1239 Siping Road</s1><s2>Shanghai 200092</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200092</wicri:noRegion></affiliation></author><author><name sortKey="Qin, Z" uniqKey="Qin Z">Z. Qin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Functional Materials Research Laboratory, Tongji University, 1239 Siping Road</s1><s2>Shanghai 200092</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200092</wicri:noRegion></affiliation></author><author><name sortKey="Shen, S Z" uniqKey="Shen S">S. Z. Shen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CSIRO Materials and Engineering Division, 37 Graham Road, Highett</s1><s2>VIC 3149</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>VIC 3149</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0368813</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0368813 INIST</idno><idno type="RBID">Pascal:11-0368813</idno><idno type="wicri:Area/Main/Corpus">002B54</idno><idno type="wicri:Area/Main/Repository">002B03</idno><idno type="wicri:Area/Chine/Extraction">000800</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bulk properties</term><term>Cobalt antimonides</term><term>Crystal defects</term><term>Crystal growth from solutions</term><term>Dispersive spectrometry</term><term>Electron field emission</term><term>Electronic properties</term><term>Field emission electron microscopy</term><term>Field emission microscopy</term><term>Filled skutterudites</term><term>Hot pressing</term><term>Hydrothermal synthesis</term><term>Indium</term><term>Material processing</term><term>Melting</term><term>Microstructure</term><term>Nanomaterial synthesis</term><term>Phase composition</term><term>Sample preparation</term><term>Scanning electron microscopy</term><term>Skutterudite</term><term>Thermoelectric materials</term><term>Thermoelectric power</term><term>Thermoelectric properties</term><term>Voids</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Synthèse hydrothermale</term><term>Pressage chaud</term><term>Indium</term><term>Synthèse nanomatériau</term><term>Croissance cristalline en solution</term><term>Fusion</term><term>Composition phase</term><term>Microstructure</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Propriété électronique</term><term>Emission électronique champ</term><term>Microscopie électronique émission champ</term><term>Microscopie émission champ</term><term>Skutterudites remplies</term><term>Antimoniure de cobalt</term><term>Skutterudite</term><term>Spectrométrie dispersive</term><term>Matériau thermoélectrique</term><term>Propriété thermoélectrique</term><term>Pouvoir thermoélectrique</term><term>Propriété volume</term><term>Cavité dans réseau</term><term>Défaut cristallin</term><term>Préparation échantillon</term><term>Traitement matériau</term><term>Substrat indium</term><term>In</term><term>CoSb3</term><term>8116B</term><term>7220P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium-filled CoSb<sub>3</sub> materials have been investigated by combining hydrothermal synthesis and hot pressing. The materials were prepared as follows. Corresponding nanopowders were synthesized by a hydrothermal synthesis method, in some cases followed by melting at 1373 K, and then hot pressed at 923 K. The phase composition and microstructure of the bulk materials were analyzed by conventional methods, such as x-ray diffraction (XRD), scanning electron microscopy (SEM), and field-emission SEM equipped with energy-dispersive x-ray spectroscopy (EDS). The thermoelectric properties of the bulk materials were measured from room temperature to 773 K. The results reveal that indium can be successfully filled into the voids of the CoSb<sub>3</sub> structure when the sample preparation procedure contains melting. The influence of the processing on the thermoelectric properties of the materials is also discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>40</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>International Conference on Thermoelectrics 2010</s1></fA09><fA11 i1="01" i2="1"><s1>DU (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>CAI (K. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>QIN (Z.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHEN (S. Z.)</s1></fA11><fA14 i1="01"><s1>Functional Materials Research Laboratory, Tongji University, 1239 Siping Road</s1><s2>Shanghai 200092</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>CSIRO Materials and Engineering Division, 37 Graham Road, Highett</s1><s2>VIC 3149</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>The National Natural Science Foundation of China</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>The Chinese Academy of Sciences</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>Shangai Institute of Ceramics</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="04" i2="1"><s1>Wuhan University of Technology (WUT)</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="05" i2="1"><s1>Zhejiang University</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA20><s1>1215-1220</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000190338781340</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0368813</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium-filled CoSb<sub>3</sub> materials have been investigated by combining hydrothermal synthesis and hot pressing. The materials were prepared as follows. Corresponding nanopowders were synthesized by a hydrothermal synthesis method, in some cases followed by melting at 1373 K, and then hot pressed at 923 K. The phase composition and microstructure of the bulk materials were analyzed by conventional methods, such as x-ray diffraction (XRD), scanning electron microscopy (SEM), and field-emission SEM equipped with energy-dispersive x-ray spectroscopy (EDS). The thermoelectric properties of the bulk materials were measured from room temperature to 773 K. The results reveal that indium can be successfully filled into the voids of the CoSb<sub>3</sub> structure when the sample preparation procedure contains melting. The influence of the processing on the thermoelectric properties of the materials is also discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A16B</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B20P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Synthèse hydrothermale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Hydrothermal synthesis</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Pressage chaud</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Hot pressing</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Croissance cristalline en solution</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" 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l="FRE"><s0>In</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>CoSb3</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8116B</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>7220P</s0><s4>INC</s4><s5>66</s5></fC03><fN21><s1>255</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Thermoelectrics (ICT2010)</s1><s2>29</s2><s3>Shangai CHN</s3><s4>2010-05-30</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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